2SC3460 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

2SC3460

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3460

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

800

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

1100

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

2.0

V

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.6A

1.5

V

ICBO

Collector cut-off current

VCB=800V; IE=0

10

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

10

μA

hFE-1

DC current gain

IC=0.4A ; VCE=5V

10

40

hFE-2

DC current gain

固IN电C半H导AN体GE SEMICONDUCTOR Cob

Output capacitance

fT

Transition frequency

Switching times

ton

Turn-on time

IC=2A ; VCE=5V

IE=0 ; VCB=10V;f=1MHz

IC=0.4A ; VCE=10V

8

120

15

pF

MHz

0.5

μs

tstg

Storage time

IC=4A;RL=100Ω

IB1=0.8A; IB2=-1.6A

VCC=400V

3.0

μs

tf

Fall time

0.3

μs

‹ hFE-1 Classifications

K

L

M

10-20 15-30 20-40

2

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