2SC3466L View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

View to exact match

2SC3466L

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat Base-emitter saturation voltage

IC=4A ;IB=0.8A

ICBO

Collector cut-off current

VCB=650V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Cob

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=1A ; VCE=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=4A;RL=50Ω

IB1=0.8A; IB2=-1.6A

VCC=200V

‹ hFE-1 Classifications

K

L

M

10-20

15-30

20-40

Product Specification

2SC3466

MIN TYP. MAX UNIT

650

V

1200

V

7

V

3.0

V

1.5

V

100

μA

100

μA

10

40

6

120

pF

5

MHz

1.0

μs

4.0

μs

0.7

μs

2

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