Product Specification
Silicon Power Transistors
www.jmnic.com
2SC3298 2SC3298A 2SC3298B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER
VCEO
Collector-emitter
breakdown voltage
2SC3298
2SC3298A
2SC3298B
VCEsat Collector-emitter saturation voltage
VBE
Emitter-base voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Cob
Output capacitance
fT
Transition frequency
CONDITIONS
IC=10mA , IB=0
IC=0.5A, IB=50mA
IC=0.5A ,VCE=5V
VCB=160V, IE=0
VEB=5V; IC=0
IC=0.1A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IC=0.1A ; VCE=10V
hFE-2 Classifications
O
Y
70-140
120-240
MIN TYP. MAX UNIT
160
180
V
200
1.5
V
1.0
V
1.0
μA
1.0
μA
70
240
25
pF
100
MHz
JMnic