2SC3320 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

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2SC3320

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3320

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A

VBEsat

Base-emitter saturation voltage

IC=6A ;IB=1.2A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=6A ; VCE=5V

Switching times resistive load

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=7.5A IB1=1.5A

IB2=-3A RL=20C

PW=20µs;Duty=<2%

MIN TYP. MAX UNIT

400

V

500

V

7

V

1.0

V

1.5

V

1.0

mA

1.0

mA

10

0.5

µs

1.5

µs

0.15

µs

2

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