2SC3309 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
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2SC3309 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3309
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector -base breakdown voltage IE=1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IB1=-IB2=0.08A
VCC<200V;RL=250>
PW=20µs
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V
100
µA
1
mA
20
8
1.0
µs
2.5
µs
1.0
µs
2
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