2SC3307 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

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2SC3307

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3307

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=10mA ; VCE=5V

hFE-2

DC current gain

Switching times

IC=5A ; VCE=5V

tr

Rise time

tstg

Storage time

tf

Fall time

IC=1A ; VCC?400V

IB1=-IB2=0.4A

MIN TYP. MAX UNIT

800

V

900

V

1.0

V

1.5

V

100

µA

1

mA

10

10

1.0

µs

3.0

µs

1.0

µs

2

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