Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3298 2SC3298A 2SC3298B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC3298
160
V(BR)CEO
Collector-emitter
breakdown voltage
2SC3298A IC=10mA , IB=0
180
V
2SC3298B
200
VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA
1.5
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.5A ,VCE=5V
VCB=160V, IE=0
VEB=5V; IC=0
1.0
V
1.0
μA
1.0
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
70
240
固IN电C半H导AN体GE SEMICONDUCTOR Cob
Output capacitance
fT
Transition frequency
hFE Classifications
O
Y
IE=0 ; VCB=10V,f=1MHz
IC=0.1A ; VCE=10V
25
pF
100
MHz
70-140
120-240
2