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2SC3320L-D-T3N-T View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
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2SC3320L-D-T3N-T
UTC
Unisonic Technologies UTC
2SC3320L-D-T3N-T Datasheet PDF : 5 Pages
1 2 3 4 5
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
500
V
VCEO
400
V
VCEO(SUS)
400
V
VEBO
7
V
Collector Current
Base Current
IC
15
A
IB
5
A
Power Dissipation
Junction Temperature
PD
80
W
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
1.55
ELECTRICAL SPECIFICATIONS (TC =25°C, Unless Otherwise Specified.)
UNIT
°C/W
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO
hFE
tON
tSTG
tF
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
IC=0.2A
IEBO=1mA
IC=6A, IB=1.2A
VCBO=500V
VEBO=7V
IC=6A, VCE=5V
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20, PW=20μs, Duty 2%
CLASSIFICATION OF hFE
RANK
RANGE
A
10~15
B
15~20
C
20~25
D
25~30
MIN TYP MAX UNIT
500
V
400
V
400
V
7
V
1
V
1.5 V
1 mA
1 mA
10
45
0.5 μs
1.5 μs
0.15 μs
E
30~35
F
35~45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R214-008.E
 

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