2SC3325-Y,LF View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
2SC3325-Y,LF Datasheet PDF : 4 Pages
| |||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SC3325
Unit: mm
• Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
• High voltage: VCEO = 50 V (min)
• Complementary to 2SA1313
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
V
50
V
5
V
500
mA
50
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
|
|
Share Link: 