2SC3315D View Datasheet(PDF) - Panasonic Corporation

Part Name

Description

View to exact match

2SC3315D

Silicon NPN epitaxial planer type

Panasonic Corporation 

Transistor

2SC3315

Silicon NPN epitaxial planer type

For high-frequency amplification

s Features

q Optimum for high-density mounting.

q Allowing supply with the radial taping.

q Optimum for RF amplification of FM/AM radios.

q High transition frequency fT.

4.0±0.2

2.0±0.2

Unit: mm

0.75 max.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

30

V

Collector to emitter voltage VCEO

20

V

Emitter to base voltage

VEBO

3

V

Collector current

IC

15

mA

Collector power dissipation PC

300

mW

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 ~ +150

˚C

0.45+–00..1200

(2.5) (2.5)

123

1:Emitter

2:Collector

3:Base

0.45+–00..1200

0.7±0.1

NS-B1 Package

s Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

VCBO

VEBO

hFE*

IC = 10µA, IE = 0

IE = 10µA, IC = 0

VCB = 6V, IE = –1mA

30

V

3

V

65

260

Base to emitter voltage

VBE

VCB = 6V, IE = –1mA

720

mV

Common emitter reverse transfer capacitance Cre

VCE = 6V, IC = 1mA, f = 10.7MHz

0.8

1.0

pF

Transition frequency

fT

VCB = 6V, IE = –1mA, f = 200MHz

450

650

MHz

Noise figure

NF

VCB = 6V, IE = –1mA, f = 100MHz

3.3

5.0

dB

Power gain

PG

VCB = 6V, IE = –1mA, f = 100MHz

20

24

dB

*hFE Rank classification

Rank

C

hFE

65 ~ 160

D

100 ~ 260

396

Share Link: