2SC3088N View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SC3088N

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A

VBEsat Base-emitter saturation voltage

IC=1.5A; IB=0.3A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.3A ; VCE=5V

hFE -2

DC current gain

IC=1.5A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.3A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=2A ;IB1=-IB2=0.4 A

RL=100Ω,VCC=200V

‹ hFE-1 classifications

L

M

N

15-30 20-40 30-50

Product Specification

2SC3088

MIN TYP. MAX UNIT

500

V

800

V

7

V

1.0

V

1.5

V

10

μA

10

μA

15

50

8

40

pF

18

MHz

1.0

μs

3.0

μs

1.0

μs

2

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