2SC3083 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
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2SC3083 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3083
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
1.0
V
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10 μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10 μA
hFE-1
DC current gain
IC=0.4A ; VCE=5V
15
50
hFE -2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR COB
Output capacitance
fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
IC=2A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.4A ; VCE=10V
IC=3A ;IB1=-IB2=0.6A
RL=66.6Ω,VCC=200V
8
40
20
1.0
2.5
pF
MHz
μs
μs
tf
Fall time
1.0 μs
hFE-1 classifications
L
M
N
15-30 20-40 30-50
2
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