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2SC3038 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
2SC3038 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
2SC3038 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE(sat) Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.4A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
COB
Output capacitance
Switching times
IC=0.4A ; VCE=10V
f=1MHz ; VCB=10V
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=200V; IC=3A
IB1=0.6A;IB2=-0.6A;
RL=66.6Ω
‹ hFE-1 Classifications
L
M
15-30
20-40
N
30-50
Product Specification
2SC3038
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.5
V
10 μA
10 μA
15
50
8
20
MHz
40
pF
1.0 μs
2.5 μs
1.0 μs
2
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