2SC3025 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

2SC3025

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A

VBE(sat) Base-emitter saturation voltage

ICES

Collector cut-off current

IC=5A; IB=1.25A

VCE=1500V; RBE=∞

Switching times

ts

Storage time

tf

Fall time

IC=5A; IB1=1A;IB2=-2.5A

Product Specification

2SC3025

MIN TYP. MAX UNIT

800

V

6

V

2.0

V

1.5

V

0.5 mA

4.0

μs

0.5

μs

2

Share Link: