2SC3123 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

2SC3123

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC3123

DESCRIPTION

·High Conversion Gain

Gce = 23dB TYP.

·Low Reverse Transfer Capacitance

Cre = 0.4pF TYP.

APPLICATIONS

·Designed for TV VHF mixer applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

30

V

VCEO Collector-Emitter Voltage

20

V

VEBO Emitter-Base Voltage

3

V

IC

Collector Current-Continuous

50

mA

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

25

mA

0.15

W

125

℃

-55~125

℃

isc Website：www.iscsemi.cn

Share Link: