2SC3099 View Datasheet(PDF) - Toshiba
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Description
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2SC3099 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3099
2SC3099
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure
· NF = 1.7dB, |S21e|2 = 15dB (f = 500 MHz)
· NF = 2.5dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
20
V
20
V
3
V
30
mA
15
mA
150
mW
125
°C
-55~125
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA, f = 500 MHz
VCE = 10 V, IC = 10 mA, f = 1 GHz
VCE = 10 V, IC = 3 mA, f = 500 MHz
VCE = 10 V, IC = 3 mA, f = 1 GHz
Min Typ. Max Unit
¾
4.0
¾ GHz
¾ 15.0 ¾
dB
¾
9.5
¾
¾
1.7
¾
dB
¾
2.5
¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
¾
VEB = 1 V, IC = 0
¾
VCE = 10 V, IC = 5 mA
30
¾
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾
¾
0.1
mA
¾
1.0
mA
¾
250
0.9
¾
pF
0.6
¾
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
2003-03-19
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