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2SC3072B View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
2SC3072B Datasheet PDF : 4 Pages
1 2 3 4
IC – VCE
10
Common emitter
8
200
150
Tc = 25°C
100
6
70
50
4
30
20
IB = 10 mA
2
0
0
0
1
2
3
4
5
6
Collector-emitter voltage VCE (V)
1000
500
300 25
25
100
hFE – IC
Tc = 100°C
50
30
Common emitter
VCE = 2 V
10
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (mA)
2SC3072
IC – VBE
8
Common emitter
VCE = 2 V
6
4
Tc = 100°C
25
25
2
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 40
1
0.5
0.3
Tc = 100°C
25
0.1
25
0.05
0.03
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
12
(1)
10
8
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
6
4
(2)
2
(3)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
Safe Operating Area
10 IC max (pulsed)**
IC max (continuous)
5
3
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
1
*: Single nonrepetitive pulse
0.5
Tc = 25°C
0.3 **: Pulse width = 10 ms (max)
Duty cycle = 30(max)
Curves must be derated linearly with
increase in temperature.
0.1
0.3
1
3
VCEO max
10
30
Collector-emitter voltage VCE (V)
3
2005-02-01
 

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