SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2877
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCE(sat) Collector-emitter saturation voltage IC=2.0A; IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=2.5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=2V
MIN TYP. MAX UNIT
40
V
0.8
V
1.0
V
0.1
µA
0.1
µA
80
240
25
100
MHz
hFE-1 Classifications
O
Y
80-160
120-240
2