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HUFA75307T3ST View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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HUFA75307T3ST
Fairchild
Fairchild Semiconductor Fairchild
HUFA75307T3ST Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HUF75307T3ST
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20V
V
Drain Current
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.6
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 5
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 14, 15
Power Dissipation (Note 2)
Derate Above 25oC . . . .
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PD
..
1.1
9.09
W
mW/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TA = 150oC
VGS = ±20V
ID = 2.6A, VGS = 10V) (Figure 9)
VDD = 30V, ID 2.6A,
RL = 11.5, VGS = 10V,
RGS = 25
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 2.6A,
RL = 11.5
Ig(REF) = 1.0mA
(Figure 13)
Gate to Source Gate Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Pad Area = 0.171 in2 (see note 2)
Pad Area = 0.068 in2
Pad Area = 0.026 in2
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 2.6A
Reverse Recovery Time
trr
ISD = 2.6A, dISD/dt = 100A/µs
Reverse Recovered Charge
QRR
ISD = 2.6A, dISD/dt = 100A/µs
NOTE:
2. 110 oC/W measured using FR-4 board with 0.171in2 footprint for 1000s.
MIN
TYP
MAX UNITS
55
-
-
V
2
-
4
V
-
-
1
µA
-
-
250
µA
-
-
100
nA
-
0.070 0.090
-
-
55
ns
-
5
-
ns
-
30
-
ns
-
35
-
ns
-
25
-
ns
-
-
90
ns
-
14
17
nC
-
8.3
10
nC
-
0.6
0.8
nC
-
1.00
-
nC
-
4.00
-
nC
-
250
-
pF
-
115
-
pF
-
30
-
pF
-
-
110
oC/W
-
-
128
oC/W
-
-
147
oC/W
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
40
ns
-
-
50
nC
©2001 Fairchild Semiconductor Corporation
HUF75307T3ST Rev. B
 

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