Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
500
400
7
UNIT
V
V
V
IC
Collector current
20
A
PT
Total power dissipation
Tmb=25℃
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
℃/W