Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2810
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A; IB=0.6A
VCB=500V ;IE=0
VEB=7V; IC=0
1.3
V
10
μA
10
μA
hFE
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
10
18
MHz
2