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2SC2856 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
2SC2856
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SC2856 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 90
120 —
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 90
120 —
V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V 5 (BR)EBO
— —5
—— V
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
I CBO
I EBO
hFE*1
VCE(sat)
— — 0.1 — — 0.1 µA
— — 0.1 — — 0.1 µA
250 — 800 250 — 800
— 0.05 0.10 — 0.05 0.10 V
VCB = 70 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA*2
IC = 10 mA, IB = 1 mA*2
Base to emitter saturation VBE(sat)
voltage
0.7 1.0 —
0.7 1.0 V
Gain bandwidth product fT
Collector output
Cob
capacitance
— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
— 3 — — 3 — pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
— 0.15 1.5 — 0.15 1.5
— 0.2 2.0 — 0.2 2.0
Noise voltage referred to en
input
— 0.7 — — 0.7 —
Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.
2. Pulse test
D
E
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 k, f = 1 kHz
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 k, f = 10 Hz
nV/Hz VCE = 6 V, IC = 10 mA,
Rg = 0, f = 1 kHz
250 to 500 400 to 800
3
 

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