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2SC2884(2004) View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
2SC2884 Datasheet PDF : 4 Pages
1 2 3 4
1000
800
600
IC – VCE
87 6
Common emitter
Ta = 25°C
5
4
3
400
2
IB = 1 mA
200
0
0
1
2
3
0
4
6
7
Collector-emitter voltage VCE (V)
2SC2884
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
25
Common emitter
VCE = 1 V
10
1
3
10
30
100
300
1000
Collector current IC (mA)
VCE (sat) – IC
1
Common emitter
0.5
IC/IB = 25
0.3
0.1
0.05
Ta = 100°C
25
0.03
25
0.01
1
3
10
30
100
300
Collector current IC (mA)
1000
IC – VBE
800
Common emitter
VCE = 1 V
600
400
Ta = 100°C 25 25
200
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage VBE (V)
Safe Operating Area
3000
IC max (pulse)*
10 ms*
1000 IC max (continuous)
1 ms*
500
100 ms*
300
100
DC operation
Ta = 25°C
50
30 *: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
10 linearly with increase in
temperature.
5 Tested without a substrate.
3
0.3
1
3
10
VCEO max
30
100
300
Collector-emitter voltage VCE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2004-07-07
 

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