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2SC2878-A View Datasheet(PDF) - Toshiba

Part Name
Description
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2SC2878-A Datasheet PDF : 0 Pages
2SC2878
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878
For Muting and Switching Applications
High emitter-base voltage: VEBO = 25 V (min)
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA)
Low on resistance: RON = 1 (typ.) (IB = 5 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
V
20
V
25
V
300
mA
60
mA
400
mW
125
°C
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
SC-43
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5F1B
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 25 V, IC = 0
hFE
VCE = 2 V, IC = 4 mA
(Note)
VCE (sat)
VBE
fT
Cob
IC = 30 mA, IB = 3 mA
VCE = 2 V, IC = 4 mA
VCE = 6 V, IC = 4 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
0.1
μA
0.1
μA
200 1200
0.042 0.1
V
0.61
V
30
MHz
4.8
7
pF
Turn-on time
ton
160
Switching time Storage time
tstg
500
ns
Fall time
tf
Duty cycle <= 2%
Note: hFE classification A: 200~700, B: 350~1200
1
130
2007-11-01
 

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