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Part Name
Description
2SC2873 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
2SC2873
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Toshiba
2SC2873 Datasheet PDF : 0 Pages
V
CE
– I
C
1.6
Common emitter
Ta
=
100°C
1.2
0.8 IB
=
3 mA
5
10
20
0.4
30
40
50
0
0
C
0.
o
4
llector c
0
u
.
r
8
rent I
C
1.2
(A)
1.6
2.0
2SC2873
V
CE
– I
C
1.6
Common emitter
Ta
=
25°C
1.2
0.8
IB
=
5 mA
10
20
0.4
30
40
0
0
0.4
0.8
1.2
1.6
2.0
Collector current I
C
(A)
V
CE
– I
C
1.6
Common emitter
Ta
= -
55°C
1.2
0.8 IB
=
5 mA
10
20
30
0.4
40
50
0
0
0.4
0.8
1.2
1.6
2.0
Collector current I
C
(A)
1000
500
300
100
50
30
h
FE
– I
C
Common emitter
VCE
=
2 V
Ta
=
100°C
25
-
55
10
10
30
100
300
1000
3000
Collector current I
C
(mA)
V
CE (sat)
– I
C
1
Common emitter
0.5
IC/IB
=
20
0.3
0.1
0.05
0.03
0.01
10
Ta
=
100°C
25
-
55
30
100
300
1000
Collector current I
C
(mA)
3000
V
BE (sat)
– I
C
10
Common emitter
5
IC/IB
=
20
3
1
Ta
= -
55°C
0.5
25
100
0.3
0.1
10
30
100
300
1000
Collector current I
C
(mA)
3000
3
2002-08-13
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