2SC2873Y View Datasheet(PDF) - Toshiba
Part Name
Description
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| 2SC2873Y Datasheet PDF : 0 Pages | |||
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC2873
Power Amplifier Applications
Power Switching Applications
2SC2873
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
· High speed switching time: tstg = 1.0 µs (typ.)
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
· Complementary to 2SA1213
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
2
A
IB
0.4
A
PC
500
PC
mW
1000
(Note 1)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2002-08-13
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