Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC1079 2SC1080
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1079
2SC1080
IC=0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=2A ; VCE=5V
MIN TYP. MAX UNIT
120
V
100
5
V
3.0
V
2.5
V
0.1
mA
0.1
mA
40
140
15
4
MHz
hFE-1 Classifications
R
Y
40-80
70-140
2