SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1113
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICEO
Collector cut-off current
VCE=120V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
MIN TYP. MAX UNIT
100
V
5
V
1.0
V
1.5
V
10
µA
10
µA
30
10
MHz
2