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2SC1163 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
2SC1163 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
2SC1163 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1163
DESCRIPTION
·
·With TO-126 package
·High power dissipation
APPLICATIONS
·Useful for high-voltage general purpose
applications
·Suitable for transformerless ,line-operated
equipment
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
300
300
4
0.1
20.8
150
-65~150
UNIT
V
V
V
A
W
VALUE
6.25
UNIT
/W
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