2SC1115 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
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2SC1115 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=140V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=12V
Product Specification
2SC1115
MIN TYP. MAX UNIT
80
V
5
V
1.5 V
2.0 V
0.1 mA
0.1 mA
30
150
10
MHz
2
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