Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1079 2SC1080
DESCRIPTION
·With TO-3 package
·Complement to type 2SA679/680
·High power dissipation
APPLICATIONS
·For audio power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半H导ANGE SEMICONDUCTOR VCBO
Collector-base voltage
2SC1079
2SC1080
Open emitter
VCEO
Collector-emitter voltage
2SC1079
2SC1080
Open base
VALUE
120
100
120
100
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IE
Emitter current
-12
A
PC
Collector power dissipation
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃