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2SB1607 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
2SB1607
NJSEMI
New Jersey Semiconductor NJSEMI
2SB1607 Datasheet PDF : 2 Pages
1 2
, L/nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1607
DESCRIPTION
• Large Collector Current
• Satisfactory Linearity of Foward Current Transfer Ratio
• Low Collector to Emitter Saturation Voltage
: VCE(sat)= -0.5V(Max.)@lc= -5A
• Full-pack Package With Outstanding Insulation,
Which Can Be Installed to The Heat Sink With One Screw
• Complement to Type 2SD2469
APPLICATIONS
• Designed for power switching and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
Vceo Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25°C
PC
Collector Power Dissipation
@ TC=25°C
Tj
Junction Temperature
-15
A
2
W
40
W
150
•c
Tstg
Storage Temperature Range
-55-150
'C
Quality Semi-Conductors
1 23
PIN 1.BASE
2. COLLECTOR
3 -EMITTER
TO-220F package
C-
-S-
1
u
o
J '-
N-
mm
DIM MIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
q 2.70
R 2.20
$ 2.65
u 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
 

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