2SB1481 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
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| 2SB1481 Datasheet PDF : 0 Pages | |||
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10rnA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -6mA
VeE(sat) Base-Emitter Saturation Voltage
lc= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; I0= 0
hpE-1 DC Current Gain
lc=-1.5A; VCE=-2V
hFE-2
DC Current Gain
lc= -3A; VCE= -2V
VECF
C-E Diode Forward Voltage
IF=1A
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=-3A, lBi=-lB2=-6mA,
VGC= -30V;RL=10fi
2SB1481
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-2.0
uA
-2.5
mA
2000
1000
2.0
V
0.15
ws
0.80
us
0.40
us
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