B1367O View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

B1367O

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1367

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2059

·Low collector saturation voltage:

VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A

·Collector power dissipation:

PC=30W(TC=25℃)

APPLICATIONS

·With general purpose applications

PINNING

PIN

DESCRIPTION

1

Emitter

2

Collector

3

Base

Fig.1 simplified outline (TO-220F) and symbol

固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

CONDITIONS

Open emitter

Open base

VALUE

-100

-100

UNIT

V

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-5

A

IB

Base current

-0.5

A

PC

Collector dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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