B1347S View Datasheet(PDF) - Inchange Semiconductor
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B1347S Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1347
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A
VBE(on)
Base-Emitter On Voltage
IC= -8A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
-2.0
V
-1.8
V
-50 μA
-50 μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
20
hFE-2
hFE-3
COB
fT
www.iscsemi.cn DC Current Gain
IC= -1A; VCE= -5V
60
DC Current Gain
IC= -8A; VCE= -5V
20
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
400
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
15
200
pF
MHz
hFE-2 Classifications
Q
S
P
60-120 80-160 100-200
isc Website：www.iscsemi.cn
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