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B1347 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
B1347
Iscsemi
Inchange Semiconductor Iscsemi
B1347 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1347
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SD2029
APPLICATIONS
·Power amplifier applications
·Optimum for the output stage of a HiFi audio amplifier
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-20
A
120
W
3.5
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
 

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