INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1334
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB=B 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB=B -0.3A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -5V
COB
Output Capacitance
IE=0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -5V
MIN TYP. MAX UNIT
-60
V
-80
V
-5
V
-1.5
V
-1.5
V
-10 μA
-10 μA
60
320
100
pF
12
MHz
hFE Classifications
D
E
F
60-120 100-200 160-320
isc Website:www.iscsemi.cn
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