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B1407L View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
B1407L
Hitachi
Hitachi -> Renesas Electronics Hitachi
B1407L Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SB1407(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
Unit
–35
V
–35
V
–5
V
–2.5
A
–3
A
18
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Collector to base breakdown V(BR)CBO –35 —
voltage
Collector to emitter breakdown V(BR)CEO –35 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
voltage
Collector cutoff current
I CBO
DC current transfer ratio
hFE1*1
60
hFE2
20
Base to emitter voltage
VBE
Collector to emitter saturation VCE(sat)
voltage
–20
320
–1.5
–1.0
Notes: 1. The 2SB1407(L)/(S) is grouped by hFE1 as follows.
Unit
V
V
V
µA
V
V
Test conditions
IC = –1 mA, IE = 0
IC = –10 mA, RBE =
IE = –1 mA, IC = 0
VCB = –35 V, IE = 0
VCE = –2 V, IC = –0.5 A*2
VCE = –2 V, IC = –1.5 A*2
VCE = –2 V, IC = –1.5 A*2
IC = –2 A, IB = –0.2 A*2
B
60 to 120
C
D
100 to 200 160 to 320
2. Pulse test.
2
 

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