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B1393AP View Datasheet(PDF) - Panasonic Corporation

Part Name
Description
View to exact match
B1393AP
Panasonic
Panasonic Corporation Panasonic
B1393AP Datasheet PDF : 2 Pages
1 2
Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
s Features
q Satisfactory linearity of foward current transfer ratio hFE
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1393
–60
VCBO
V
base voltage 2SB1393A
–80
Collector to 2SB1393
–60
emitter voltage 2SB1393A
VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–5
A
Collector current
IC
–3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
25
W
2.0
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB1393
current
2SB1393A
Collector cutoff
2SB1393
current
2SB1393A
Emitter cutoff current
Collector to emitter 2SB1393
voltage
2SB1393A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICEO
ICES
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –5V, IC = – 0.1A, f = 1MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
–300
µA
–300
–200
µA
–200
–1
mA
–60
V
–80
70
250
10
–1.8
V
–1.2
V
20
MHz
0.5
µs
1.2
µs
0.3
µs
1
 

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