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B1430M View Datasheet(PDF) - NEC => Renesas Technology

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B1430M Datasheet PDF : 0 Pages
DATA SHEET
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
FEATURES
• High hFE due to Darlington connection:
hFE 2,000 (VCE = 2 V, IC = 2 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*
10
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT (TC = 25°C)
20
W
Total power dissipation
PT (TA = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW 10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928
 

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