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B1186A View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name
Description
View to exact match
B1186A
JMNIC
Quanzhou Jinmei Electronic JMNIC
B1186A Datasheet PDF : 3 Pages
1 2 3
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50μA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.1A ; VCE=-5V
fT
Transition frequency
IC=-0.1A; VCE=-5V
COB
Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
‹ hFE Classifications
D
E
60-120
100-200
Product Specification
2SB1186A
MIN TYP. MAX UNIT
-160
V
-160
V
-5
V
-2.0
V
-1.5
V
-1.0 μA
-1.0 μA
60
200
50
MHz
30
pF
2
 

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