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B1015-Y View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
B1015-Y
Iscsemi
Inchange Semiconductor Iscsemi
B1015-Y Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1015
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0
-60
V
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-1.7
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-0.5A ;VCE=-5V
VCB=-60V; IE=0
VEB=-7V; IC=0
-1.0
V
-100 μA
-100 μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
60
200
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
fT
Transition frequency
IC=-0.5A; VCE=-5V
9
MHz
COB
Collector output capacitance
f=1MHz ; VCB=-10V
150
固I电NC半H导A体NGE SEMICONDUCTOR Switching times
ton
Trun-on time
ts
Storage time
tf
Fall time
0.4
RL=15Ω;VCC=-30V
IB1=-IB2=-0.2A
1.7
Duty cycle1%
0.5
pF
μs
μs
μs
‹ hFE-1 Classifications
O
Y
60-120
100-200
2
 

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