Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1015
DESCRIPTION
·
·With TO-220Fa package
·Collector power dissipation
:PC=25W@TC=25℃
·Low collector saturation voltage
·Complement to type 2SD1406
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
-60
-60
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-3
A
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ta=25℃
TC=25℃
-0.5
A
2.0
W
25
150
℃
-55~150
℃