B1015AY View Datasheet(PDF) - Toshiba

Part Name

Description

View to exact match

B1015AY

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Toshiba 

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1015A

2SB1015A

Audio Frequency Power Amplifier Applications

· Low collector saturation voltage: VCE (sat) = −1.7 V (max)

(IC = −3 A, IB = −0.3 A)

· Collector power dissipation: PC = 25 W (Tc = 25°C)

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power

dissipation

Ta = 25°C

Tc = 25°C

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

-60

V

-60

V

-7

V

-3

A

-0.5

A

2.0

W

25

150

°C

-55~150

°C

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

1

2003-02-04

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