2SA1312 View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

View to exact match

2SA1312

PNP Epitaxial Planar Silicon Transistors

KEXIN Industrial 

SMD Type

Transistors

Silicon PNP Epitaxial Type

2SA1312

Features

High voltage.

High hFE.

Low noise.

Small package.

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector dissipation

Jumction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-120

V

VCEO

-120

V

VEBO

-5

V

IC

-100

A

IB

-20

A

PC

150

W

Tj

125

Tstg

-55 to +150

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Collector-emitter saturation voltage

Gain bandwidth product

Output capacitance

Noise figure

Symbol

Testconditons

IcBO VCB = -120V , IE = 0

IEBO VEB = -5V , IC = 0

hFE VCE = -6V , IC = -2mA

VCE(sat) IC = -10mA , IB =-1mA

fT VCE = -6V , IC = -1mA

Cob VCB = -10V , f = 1MHz

NF VCE =-6 V, IC=-0.1 mA, f=100 Hz,Rg=10 KÙ

NF VCE =-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 KÙ

Min Typ Max Unit

-0.1 ìA

-0.1 ìA

200

700

-0.3 V

100

MHz

4

pF

0.5 6 dB

0.2 3 dB

hFE Classification

Marking

Rank

hFE

ABG

GR

200 400

ABL

BL

350 700

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