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2SA1010 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
2SA1010
Iscsemi
Inchange Semiconductor Iscsemi
2SA1010 Datasheet PDF : 3 Pages
1 2 3
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1010
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A ; IB= -0.5A, L=1mH
VCEX(SUS)-1 Collector-Emitter Sustaining Voltage
VCEX(SUS)-2 Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB1=-IB2= -0.5A,
VBE(OFF)=5.0V, L=180μH,clamped
IC= -10A ; IB1= -1.0A; IB2= -0.5A,
VBE(OFF)= 5.0V, L= 180μH,clamped
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB=B -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5.0A; IB=B -0.5A
ICBO
Collector Cutoff Current
VCB= -100V ; IE=0
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -100V ; RBE= 51Ω,Ta=125
VCE= -100V; VBE(off)= -1.5V
VCE= -100V; VBE(off)= -1.5V,Ta=125
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE-2
DC Current Gain
IC= -3.0A ; VCE= -5V
hFE-3
DC Current Gain
IC= -5.0A ; VCE= -5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -5.0A ,RL= 10Ω,
IB1= -IB2= -0.5A,VCC-50V
‹ hFE-2 Classifications
M
L
K
40-80 60-120 100-200
MIN MAX UNIT
-100
V
-100
V
-100
V
-0.6
V
-1.5
V
-10
μA
-1.0
mA
-10
μA
-1.0
mA
-10
μA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
isc Websitewww.iscsemi.cn
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