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2PD602ARL View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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2PD602ARL
NXP
NXP Semiconductors. NXP
2PD602ARL Datasheet PDF : 0 Pages
NXP Semiconductors
2PD602AxL
50 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
IEBO
hFE
VCEsat
fT
collector-base cut-off current VCB = 60 V; IE = 0 A
-
-
VCB = 60 V; IE = 0 A;
-
-
Tj = 150 °C
emitter-base cut-off current VEB = 4 V; IC = 0 A
-
-
DC current gain
VCE = 10 V;
IC = 500 mA
[1] 40
-
hFE group Q
VCE = 10 V;
IC = 150 mA
[1] 85
-
hFE group R
VCE = 10 V;
IC = 150 mA
[1] 120 -
hFE group S
VCE = 10 V;
IC = 150 mA
[1] 170 -
collector-emitter saturation IC = 300 mA;
voltage
IB = 30 mA
[1] -
-
transition frequency
VCE = 10 V;
[1]
IC = 50 mA;
f = 100 MHz
10 nA
5
µA
10 nA
-
170
240
340
600 mV
hFE group Q
hFE group R
hFE group S
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
140 -
160 -
180 -
-
-
-
MHz
-
MHz
-
MHz
15 pF
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
2PD602AXL_1
Product data sheet
Rev. 01 — 27 October 2008
© NXP B.V. 2008. All rights reserved.
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