2PD601A View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
2PD601A Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors;
50 V, 100 mA
Product specification
2PD601A series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
hFE
VCEsat
Cc
fT
emitter-base cut-off current
DC current gain
DC current gain
group Q
group R
group S
collector-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 2 V; note 1
IC = 2 mA; VCE = 10 V
IC = 100 mA; IB = 10 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 2 mA; VCE = 10 V;
f = 100 MHz
MIN.
−
−
−
90
160
210
290
−
−
100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
10
5
10
−
260
340
460
250
3
−
UNIT
nA
µA
nA
mV
pF
MHz
2004 Feb 12
4
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