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2PB710ARL View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
2PB710ARL 50 V, 500 mA PNP general-purpose transistors NXP
NXP Semiconductors. NXP
2PB710ARL Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NXP Semiconductors
2PB710ARL; 2PB710ASL
50 V, 500 mA PNP general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tamb
Tstg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
-
55
65
Max Unit
60
V
50
V
5
V
500 mA
1
A
200 mA
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] -
-
500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
IEBO
hFE
VCEsat
collector-base cut-off
current
VCB = 60 V; IE = 0 A
-
-
VCB = 60 V; IE = 0 A;
-
-
Tj = 150 °C
emitter-base cut-off current VEB = 5 V; IC = 0 A
-
-
DC current gain
VCE = 10 V;
IC = 500 mA
[1] 40
-
hFE group R
VCE = 10 V;
IC = 150 mA
[1] 120 -
hFE group S
VCE = 10 V;
IC = 150 mA
[1] 170 -
collector-emitter saturation IC = 300 mA;
voltage
IB = 30 mA
[1] -
-
10 nA
5 µA
10 nA
-
240
340
600 mV
2PB710AXL_1
Product data sheet
Rev. 01 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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