2PC4617JQ View Datasheet(PDF) - Philips Electronics
Part Name
Description
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2PC4617JQ Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MAX.
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PC4617JQ
2PC4617JR
2PC4617JS
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
IC = 50 mA; IB = 5 mA; note 1
MIN.
−
−
−
MAX.
100
5
100
UNIT
nA
µA
nA
120
270
180
390
270
560
−
200
mV
IE = ie = 0; VCB = 12 V; f = 1 MHz −
1.5
IC = 2 mA; VCE = 12 V; f = 100 MHz; 100
−
note 1
pF
MHz
1999 May 04
3
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